Sample 24

Run Data

	Process	carrier	HBr	Ar	Pressure mT	RF Power	ICP power	Temp	Time (min)	Sample# Res C
6	2	Si wafer - not bonded	50	0	5.0	50	750	20	10	24.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

Total depth after etching is 8.536 um
Calculated remaining resist as 8.02um, indicating an erosion of 0.72um in 10 minutes of etching
This equates to an erosion rate of 72 nm/min
The etch depth of 0.52um in 10 mins indicates an etch rate of 52.0nm/min
The selectivity is therefore 0.72:1

	Result
Initial resist (um)	8.741000
Total depth after etch (um)	8.536000
Remaining resist (um)	8.016000
Semiconductor etched(um)	0.520000
Etch rate (nm/min)	52.000000
Erosion rate (nm/min)	72.500000
Selectivity	0.717241